NON VOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
PURPOSE: A non volatile memory device and a method for manufacturing the same are provided to reduce an area required for a drain selection line by simplifying an electrode wiring process. CONSTITUTION: In a non volatile memory device and a method for manufacturing the same, a bit line(112) is conne...
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| creator | OH, SEUL KI LEE, SEUNG BECK LEE, JUN HYUK KIM, SUK GOO |
| description | PURPOSE: A non volatile memory device and a method for manufacturing the same are provided to reduce an area required for a drain selection line by simplifying an electrode wiring process. CONSTITUTION: In a non volatile memory device and a method for manufacturing the same, a bit line(112) is connected to each active layer of the bit line connection. The bit line is connected to each active layer through a bit line plug(111). The bit line vertically is crossed with the word line(11). The bit line is formed in upper part of a string layer(103). One bit line is connected to all strings(103A) which are identical. The drain select line is connected to a plug(109) which is arranged in vertical direction. |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES |
| title | NON VOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME |
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