NON VOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

PURPOSE: A non volatile memory device and a method for manufacturing the same are provided to reduce an area required for a drain selection line by simplifying an electrode wiring process. CONSTITUTION: In a non volatile memory device and a method for manufacturing the same, a bit line(112) is connected to each active layer of the bit line connection. The bit line is connected to each active layer through a bit line plug(111). The bit line vertically is crossed with the word line(11). The bit line is formed in upper part of a string layer(103). One bit line is connected to all strings(103A) which are identical. The drain select line is connected to a plug(109) which is arranged in vertical direction.