CAPACITOR AND PROCESS FOR MANUFACTURING CAPACITOR

Disclosed is a capacitor characterized by comprising: a lower electrode layer comprising an electrically conductive metal or a compound of the metal; a first dielectric film formed on the lower electrode layer and comprising ZrO2; a second dielectric film formed on the first dielectric film and comp...

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Hauptverfasser: AKASAKA YASUSHI, ARIKADO TSUNETOSHI, KAITSUKA TAKANOBU, ALBERT CHIN
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Sprache:eng ; kor
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creator AKASAKA YASUSHI
ARIKADO TSUNETOSHI
KAITSUKA TAKANOBU
ALBERT CHIN
description Disclosed is a capacitor characterized by comprising: a lower electrode layer comprising an electrically conductive metal or a compound of the metal; a first dielectric film formed on the lower electrode layer and comprising ZrO2; a second dielectric film formed on the first dielectric film and comprising a dielectric material comprising a Ti-containing metal oxide; and an upper electrode layer formed on the second dielectric film.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20110099797A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20110099797A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20110099797A3</originalsourceid><addsrcrecordid>eNrjZDB0dgxwdPYM8Q9ScPRzUQgI8nd2DQ5WcAPyfR39Qt0cnUNCgzz93BXg6ngYWNMSc4pTeaE0N4Oym2uIs4duakF-fGpxQWJyal5qSbx3kJGBoaGBgaWluaW5ozFxqgDsgyeH</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>CAPACITOR AND PROCESS FOR MANUFACTURING CAPACITOR</title><source>esp@cenet</source><creator>AKASAKA YASUSHI ; ARIKADO TSUNETOSHI ; KAITSUKA TAKANOBU ; ALBERT CHIN</creator><creatorcontrib>AKASAKA YASUSHI ; ARIKADO TSUNETOSHI ; KAITSUKA TAKANOBU ; ALBERT CHIN</creatorcontrib><description>Disclosed is a capacitor characterized by comprising: a lower electrode layer comprising an electrically conductive metal or a compound of the metal; a first dielectric film formed on the lower electrode layer and comprising ZrO2; a second dielectric film formed on the first dielectric film and comprising a dielectric material comprising a Ti-containing metal oxide; and an upper electrode layer formed on the second dielectric film.</description><language>eng ; kor</language><subject>ELECTRICITY</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20110908&amp;DB=EPODOC&amp;CC=KR&amp;NR=20110099797A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20110908&amp;DB=EPODOC&amp;CC=KR&amp;NR=20110099797A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>AKASAKA YASUSHI</creatorcontrib><creatorcontrib>ARIKADO TSUNETOSHI</creatorcontrib><creatorcontrib>KAITSUKA TAKANOBU</creatorcontrib><creatorcontrib>ALBERT CHIN</creatorcontrib><title>CAPACITOR AND PROCESS FOR MANUFACTURING CAPACITOR</title><description>Disclosed is a capacitor characterized by comprising: a lower electrode layer comprising an electrically conductive metal or a compound of the metal; a first dielectric film formed on the lower electrode layer and comprising ZrO2; a second dielectric film formed on the first dielectric film and comprising a dielectric material comprising a Ti-containing metal oxide; and an upper electrode layer formed on the second dielectric film.</description><subject>ELECTRICITY</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDB0dgxwdPYM8Q9ScPRzUQgI8nd2DQ5WcAPyfR39Qt0cnUNCgzz93BXg6ngYWNMSc4pTeaE0N4Oym2uIs4duakF-fGpxQWJyal5qSbx3kJGBoaGBgaWluaW5ozFxqgDsgyeH</recordid><startdate>20110908</startdate><enddate>20110908</enddate><creator>AKASAKA YASUSHI</creator><creator>ARIKADO TSUNETOSHI</creator><creator>KAITSUKA TAKANOBU</creator><creator>ALBERT CHIN</creator><scope>EVB</scope></search><sort><creationdate>20110908</creationdate><title>CAPACITOR AND PROCESS FOR MANUFACTURING CAPACITOR</title><author>AKASAKA YASUSHI ; ARIKADO TSUNETOSHI ; KAITSUKA TAKANOBU ; ALBERT CHIN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20110099797A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2011</creationdate><topic>ELECTRICITY</topic><toplevel>online_resources</toplevel><creatorcontrib>AKASAKA YASUSHI</creatorcontrib><creatorcontrib>ARIKADO TSUNETOSHI</creatorcontrib><creatorcontrib>KAITSUKA TAKANOBU</creatorcontrib><creatorcontrib>ALBERT CHIN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>AKASAKA YASUSHI</au><au>ARIKADO TSUNETOSHI</au><au>KAITSUKA TAKANOBU</au><au>ALBERT CHIN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>CAPACITOR AND PROCESS FOR MANUFACTURING CAPACITOR</title><date>2011-09-08</date><risdate>2011</risdate><abstract>Disclosed is a capacitor characterized by comprising: a lower electrode layer comprising an electrically conductive metal or a compound of the metal; a first dielectric film formed on the lower electrode layer and comprising ZrO2; a second dielectric film formed on the first dielectric film and comprising a dielectric material comprising a Ti-containing metal oxide; and an upper electrode layer formed on the second dielectric film.</abstract><oa>free_for_read</oa></addata></record>
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title CAPACITOR AND PROCESS FOR MANUFACTURING CAPACITOR
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T14%3A57%3A12IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=AKASAKA%20YASUSHI&rft.date=2011-09-08&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EKR20110099797A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true