METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE PREVENTED WARPAGE

PURPOSE: A method for manufacturing a semiconductor device is provided to prevent the breakdown of a support layer after a wet dip-out process by laminating the support layer with different stress to attenuate stress. CONSTITUTION: An isolation insulating layer including a first support layer(23A) with first stress and a second support layer(23B) with second stress is formed on a substrate(21). The first support layer and the second support layer include a silicon nitrification layer. An open area is formed by etching the isolation insulating layer. A storage node(25) is formed in the open area. The insulation layer is removed by a wet dip-out process.