STRESS-REDUCED NI-P/PD STACKS FOR BONDABLE WAFER SURFACES

The invention relates to a substrate having a bondable metal coating comprising, in this order, on an Al or Cu surface: (a) a Ni-P layer, (b) a Pd layer and, optionally, (c) an Au layer, wherein the thickness of the Ni-P layer (a) is 0.2 to 10 µm, the thickness of the Pd layer (b) is 0.05 to 1.0 µm...

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Bibliographische Detailangaben
Hauptverfasser:	SUCHENTRUNK CHRISTOF, GAIDA JOSEF, BOYLE MIKE, WASHO BRIAN, UHLIG ALBRECHT
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The invention relates to a substrate having a bondable metal coating comprising, in this order, on an Al or Cu surface: (a) a Ni-P layer, (b) a Pd layer and, optionally, (c) an Au layer, wherein the thickness of the Ni-P layer (a) is 0.2 to 10 µm, the thickness of the Pd layer (b) is 0.05 to 1.0 µm and the thickness of the optional Au layer (c) is 0.01 to 0.5 µm, and wherein the Ni-P layer (a) has a P content of 10.5 to 14 wt.-%. The deposit internal stress of the resulting Ni-P/Pd stack is not higher than 34.48 MPa (5,000 psi). Further, a process for the preparation of such a substrate is described.