APPARATUS AND METHOD FOR ATOMIC LAYER DEPOSITION

Apparatus (2) for atomic layer deposition on a surface (4) of a substrate (6). The apparatus (2) includes a precursor injector head (10), the precursor injector head (10) comprising a precursor supply (12) and a deposition space (14) that in use is bounded by the precursor injector head (10) and the...

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Hauptverfasser:	SPEE CAROLUS IDA MARIA ANTONIUS, VAN SOMEREN BOB, VERMEER ADRIANUS JOHANNES PETRUS MARIA, MAAS DIEDERIK JAN, LEXMOND AXEL SEBASTIAAN, DUISTERWINKEL ANTONIE ELLERT
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Apparatus (2) for atomic layer deposition on a surface (4) of a substrate (6). The apparatus (2) includes a precursor injector head (10), the precursor injector head (10) comprising a precursor supply (12) and a deposition space (14) that in use is bounded by the precursor injector head (10) and the substrate surface (4). The precursor injector head (10) is arranged for injecting a precursor gas from the precursor supply (12) into the deposition space (14) for contacting the substrate surface (4). The apparatus (2) is arranged for relative motion between the deposition space (14) and the substrate (6) in a plane of the substrate surface (4). The apparatus (2) is provided with a confining structure (26) arranged for confining the injected precursor gas to the deposition space (14) adjacent to the substrate surface (4).