INSULATING FILM MATERIAL, METHOD FOR FORMING FILM BY USING THE INSULATING FILM MATERIAL, AND INSULATING FILM

An insulating film material for plasma CVD, wherein the material is represented by the chemical formula (1); a film forming method using the material; and an insulating film; (in the formula, m and n represent integer of 3 to 6, and m and n may be the same or different from each other in a molecule....

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Bibliographische Detailangaben
Hauptverfasser:	MIYAZAWA KAZUHIRO, SHINRIKI MANABU, OHNO TAKAHISA, TAJIMA NOBUO, INAISHI YOSHIAKI
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	An insulating film material for plasma CVD, wherein the material is represented by the chemical formula (1); a film forming method using the material; and an insulating film; (in the formula, m and n represent integer of 3 to 6, and m and n may be the same or different from each other in a molecule.)