METHOD FOR FORMING A PATTERN STRUCTURE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME

PURPOSE: A method for forming a pattern structure and a method for manufacturing a semiconductor device are provided to suppress the composition change of a thin film after an etching process by uniformly etching elements included in the thin film. CONSTITUTION: A magnetic material layer including a...

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Bibliographische Detailangaben
Hauptverfasser:	EOM, KYOUNG HA, HWANG, JAE SEUNG, KWON, SUNG UN, RYU, YONG HWAN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE: A method for forming a pattern structure and a method for manufacturing a semiconductor device are provided to suppress the composition change of a thin film after an etching process by uniformly etching elements included in the thin film. CONSTITUTION: A magnetic material layer including at least two element alloy materials and magnetic materials are formed on a substrate(10). The magnetic material layer includes a laminate structure for forming a magnetic tunnel junction structure. The magnetic material layer includes a lower magnetic film, a tunnel barrier film, and an upper magnetic film. The tunnel barrier film is made of metal oxide with an insulation property. A magnetic pattern(14) includes a lower magnetic film pattern(14a), a tunnel barrier film pattern(14b), and an upper magnetic film pattern(14c).