METHOD FOR PRODUCING HIGH PURITY TRICHLOROSILANE FOR POLY-SILICON USING CHLORINE GAS OR HYDROGEN CHLORIDE

METHOD FOR PRODUCING HIGH PURITY TRICHLOROSILANE FOR POLY-SILICON USING CHLORINE GAS OR HYDROGEN CHLORIDE

PURPOSE: A method for producing high purity trichlorosilane for poly-crystalline silicon using chlorine gas or hydrogen chloride is provided to cost-effective obtain the trichlorosilane using heat generated from chlorine reaction. CONSTITUTION: A method for producing high purity trichlorosilane incl...

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Hauptverfasser: KANG, KYUNG HOON, AHN, JUNG HO, KO, TAE HO, OH, DAN BI
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Sprache:eng ; kor
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CHEMISTRY
COMPOUNDS THEREOF
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
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creator KANG, KYUNG HOON
AHN, JUNG HO
KO, TAE HO
OH, DAN BI
description PURPOSE: A method for producing high purity trichlorosilane for poly-crystalline silicon using chlorine gas or hydrogen chloride is provided to cost-effective obtain the trichlorosilane using heat generated from chlorine reaction. CONSTITUTION: A method for producing high purity trichlorosilane includes the following: Tetrachloride, metallic silicon, hydrogen, and chlorine or hydrochloride is reacted under catalyst. The reaction is implemented at temperature between 400 and 700 degrees Celsius. The pressure condition of the reaction is in a range between 1 and 40 bar. The catalyst is copper-based catalyst.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20110051624A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20110051624A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20110051624A3</originalsourceid><addsrcrecordid>eNrjZMj0dQ3x8HdRcPMPUggI8ncJdfb0c1fw8HT3UAgIDfIMiVQICfJ09vDxD_IP9vRx9HOFqPT3idQF8j2d_f0UQoNBWsBqPIHy7o7BCkAlHpEuQf7urn5QCRdXHgbWtMSc4lReKM3NoOzmGuLsoZtakB-fWlyQmJyal1oS7x1kZGBoaGBgamhmZOJoTJwqAFq_NvM</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD FOR PRODUCING HIGH PURITY TRICHLOROSILANE FOR POLY-SILICON USING CHLORINE GAS OR HYDROGEN CHLORIDE</title><source>esp@cenet</source><creator>KANG, KYUNG HOON ; AHN, JUNG HO ; KO, TAE HO ; OH, DAN BI</creator><creatorcontrib>KANG, KYUNG HOON ; AHN, JUNG HO ; KO, TAE HO ; OH, DAN BI</creatorcontrib><description>PURPOSE: A method for producing high purity trichlorosilane for poly-crystalline silicon using chlorine gas or hydrogen chloride is provided to cost-effective obtain the trichlorosilane using heat generated from chlorine reaction. CONSTITUTION: A method for producing high purity trichlorosilane includes the following: Tetrachloride, metallic silicon, hydrogen, and chlorine or hydrochloride is reacted under catalyst. The reaction is implemented at temperature between 400 and 700 degrees Celsius. The pressure condition of the reaction is in a range between 1 and 40 bar. The catalyst is copper-based catalyst.</description><language>eng ; kor</language><subject>CHEMISTRY ; COMPOUNDS THEREOF ; INORGANIC CHEMISTRY ; METALLURGY ; NON-METALLIC ELEMENTS</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20110518&amp;DB=EPODOC&amp;CC=KR&amp;NR=20110051624A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20110518&amp;DB=EPODOC&amp;CC=KR&amp;NR=20110051624A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KANG, KYUNG HOON</creatorcontrib><creatorcontrib>AHN, JUNG HO</creatorcontrib><creatorcontrib>KO, TAE HO</creatorcontrib><creatorcontrib>OH, DAN BI</creatorcontrib><title>METHOD FOR PRODUCING HIGH PURITY TRICHLOROSILANE FOR POLY-SILICON USING CHLORINE GAS OR HYDROGEN CHLORIDE</title><description>PURPOSE: A method for producing high purity trichlorosilane for poly-crystalline silicon using chlorine gas or hydrogen chloride is provided to cost-effective obtain the trichlorosilane using heat generated from chlorine reaction. CONSTITUTION: A method for producing high purity trichlorosilane includes the following: Tetrachloride, metallic silicon, hydrogen, and chlorine or hydrochloride is reacted under catalyst. The reaction is implemented at temperature between 400 and 700 degrees Celsius. The pressure condition of the reaction is in a range between 1 and 40 bar. The catalyst is copper-based catalyst.</description><subject>CHEMISTRY</subject><subject>COMPOUNDS THEREOF</subject><subject>INORGANIC CHEMISTRY</subject><subject>METALLURGY</subject><subject>NON-METALLIC ELEMENTS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZMj0dQ3x8HdRcPMPUggI8ncJdfb0c1fw8HT3UAgIDfIMiVQICfJ09vDxD_IP9vRx9HOFqPT3idQF8j2d_f0UQoNBWsBqPIHy7o7BCkAlHpEuQf7urn5QCRdXHgbWtMSc4lReKM3NoOzmGuLsoZtakB-fWlyQmJyal1oS7x1kZGBoaGBgamhmZOJoTJwqAFq_NvM</recordid><startdate>20110518</startdate><enddate>20110518</enddate><creator>KANG, KYUNG HOON</creator><creator>AHN, JUNG HO</creator><creator>KO, TAE HO</creator><creator>OH, DAN BI</creator><scope>EVB</scope></search><sort><creationdate>20110518</creationdate><title>METHOD FOR PRODUCING HIGH PURITY TRICHLOROSILANE FOR POLY-SILICON USING CHLORINE GAS OR HYDROGEN CHLORIDE</title><author>KANG, KYUNG HOON ; AHN, JUNG HO ; KO, TAE HO ; OH, DAN BI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20110051624A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2011</creationdate><topic>CHEMISTRY</topic><topic>COMPOUNDS THEREOF</topic><topic>INORGANIC CHEMISTRY</topic><topic>METALLURGY</topic><topic>NON-METALLIC ELEMENTS</topic><toplevel>online_resources</toplevel><creatorcontrib>KANG, KYUNG HOON</creatorcontrib><creatorcontrib>AHN, JUNG HO</creatorcontrib><creatorcontrib>KO, TAE HO</creatorcontrib><creatorcontrib>OH, DAN BI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KANG, KYUNG HOON</au><au>AHN, JUNG HO</au><au>KO, TAE HO</au><au>OH, DAN BI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD FOR PRODUCING HIGH PURITY TRICHLOROSILANE FOR POLY-SILICON USING CHLORINE GAS OR HYDROGEN CHLORIDE</title><date>2011-05-18</date><risdate>2011</risdate><abstract>PURPOSE: A method for producing high purity trichlorosilane for poly-crystalline silicon using chlorine gas or hydrogen chloride is provided to cost-effective obtain the trichlorosilane using heat generated from chlorine reaction. CONSTITUTION: A method for producing high purity trichlorosilane includes the following: Tetrachloride, metallic silicon, hydrogen, and chlorine or hydrochloride is reacted under catalyst. The reaction is implemented at temperature between 400 and 700 degrees Celsius. The pressure condition of the reaction is in a range between 1 and 40 bar. The catalyst is copper-based catalyst.</abstract><oa>free_for_read</oa></addata></record>
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subjects CHEMISTRY
COMPOUNDS THEREOF
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
title METHOD FOR PRODUCING HIGH PURITY TRICHLOROSILANE FOR POLY-SILICON USING CHLORINE GAS OR HYDROGEN CHLORIDE
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-22T02%3A28%3A28IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KANG,%20KYUNG%20HOON&rft.date=2011-05-18&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EKR20110051624A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true