METHOD FOR PRODUCING HIGH PURITY TRICHLOROSILANE FOR POLY-SILICON USING CHLORINE GAS OR HYDROGEN CHLORIDE

METHOD FOR PRODUCING HIGH PURITY TRICHLOROSILANE FOR POLY-SILICON USING CHLORINE GAS OR HYDROGEN CHLORIDE

PURPOSE: A method for producing high purity trichlorosilane for poly-crystalline silicon using chlorine gas or hydrogen chloride is provided to cost-effective obtain the trichlorosilane using heat generated from chlorine reaction. CONSTITUTION: A method for producing high purity trichlorosilane incl...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: KANG, KYUNG HOON, AHN, JUNG HO, KO, TAE HO, OH, DAN BI
Format: Patent
Sprache:eng ; kor
Schlagworte:
CHEMISTRY
COMPOUNDS THEREOF
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PURPOSE: A method for producing high purity trichlorosilane for poly-crystalline silicon using chlorine gas or hydrogen chloride is provided to cost-effective obtain the trichlorosilane using heat generated from chlorine reaction. CONSTITUTION: A method for producing high purity trichlorosilane includes the following: Tetrachloride, metallic silicon, hydrogen, and chlorine or hydrochloride is reacted under catalyst. The reaction is implemented at temperature between 400 and 700 degrees Celsius. The pressure condition of the reaction is in a range between 1 and 40 bar. The catalyst is copper-based catalyst.