III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

PURPOSE: A group iii nitride semiconductor light emitting device is provided to improve the quantum efficiency by reducing the occurrence frequency of non-radiative recombination by injecting the electron and the hole in the direction being parallel with the active layer. CONSTITUTION: An active layer(12) is formed on a substrate(11). The active layer generates the light by the recombination of the hole and the electron. The active layer comprises a quantum well layer(12b) and barrier walls(12a, 12c) positioned on upper and lower surfaces of the quantum well layer. A first conductive semiconductor layer(14) and a second conductive semiconductor layer(16) are respectively located on both sides of the active layer.