METHOD FOR MANUFACTURING CYLINDER TYPE CAPACITOR

PURPOSE: A capacitor manufacturing method of cylinder structure is provided to prevent the loss of the bottom of a storage node during the etching process of a following support layer by forming a capping layer using the amorphose carbon layer. CONSTITUTION: An etch stopping layer(22) and a support...

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Hauptverfasser:	LEE, SANG DO, LEE, KEE JUNE
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	LEE, SANG DO LEE, KEE JUNE
description	PURPOSE: A capacitor manufacturing method of cylinder structure is provided to prevent the loss of the bottom of a storage node during the etching process of a following support layer by forming a capping layer using the amorphose carbon layer. CONSTITUTION: An etch stopping layer(22) and a support membrane(24) are made of the nitride film. An isolation insulating layer(23) and a protective film are made of the oxide film. The support membrane implements the role of preventing the leaning phenomenon during the following wet dip out process. The storage node conductive layer is made of the metallic layer.
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CONSTITUTION: An etch stopping layer(22) and a support membrane(24) are made of the nitride film. An isolation insulating layer(23) and a protective film are made of the oxide film. The support membrane implements the role of preventing the leaning phenomenon during the following wet dip out process. The storage node conductive layer is made of the metallic layer.</description><language>eng ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110106&DB=EPODOC&CC=KR&NR=20110001723A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110106&DB=EPODOC&CC=KR&NR=20110001723A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LEE, SANG DO</creatorcontrib><creatorcontrib>LEE, KEE JUNE</creatorcontrib><title>METHOD FOR MANUFACTURING CYLINDER TYPE CAPACITOR</title><description>PURPOSE: A capacitor manufacturing method of cylinder structure is provided to prevent the loss of the bottom of a storage node during the etching process of a following support layer by forming a capping layer using the amorphose carbon layer. 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CONSTITUTION: An etch stopping layer(22) and a support membrane(24) are made of the nitride film. An isolation insulating layer(23) and a protective film are made of the oxide film. The support membrane implements the role of preventing the leaning phenomenon during the following wet dip out process. The storage node conductive layer is made of the metallic layer.</abstract><oa>free_for_read</oa></addata></record>
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	METHOD FOR MANUFACTURING CYLINDER TYPE CAPACITOR
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