METHOD FOR FORMING PHOTORESIST PATTERN OF SEMICONDUCTOR DEVICE

PURPOSE: A photoresist pattern formation method is provided to improve the LER of a polymer layer pattern by reducing the size of an empty space between molecules inside the polymer layer after thermal-processing a filling layer. CONSTITUTION: A polymer layer is formed on an etched layer(21). A fill...

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Bibliographische Detailangaben
1. Verfasser:	SONG, PIL GEUN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE: A photoresist pattern formation method is provided to improve the LER of a polymer layer pattern by reducing the size of an empty space between molecules inside the polymer layer after thermal-processing a filling layer. CONSTITUTION: A polymer layer is formed on an etched layer(21). A filling layer, which is composed of a polymer having a molecular weight less than the polymer layer, is formed. The polymer layer and the filling layer comprise a photosensitive polymer. The etched layer is formed on a substrate(20).