THE PROCESS IMPROVEMENT TO THE FAST GROWTH RATE

PURPOSE: A growth rate improving method is provided to improve productivity by improving temperature gradients of a solid-liquid interface and rapidly solidifying a melt solution. CONSTITUTION: A solid-liquid interface is located in a location having temperature gradients inside a heating element(10...

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Bibliographische Detailangaben
Hauptverfasser:	JUNG, HYUN SUK, OH, MYUNG HWAN, KIM, JIN HEE, JUNG, EUI SAM, SONG, JOON SUK
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PURPOSE: A growth rate improving method is provided to improve productivity by improving temperature gradients of a solid-liquid interface and rapidly solidifying a melt solution. CONSTITUTION: A solid-liquid interface is located in a location having temperature gradients inside a heating element(10). A melt solution is rapidly coagulated by increasing the temperature gradients after controlling the location(11) of the solid-liquid interface and raising it higher than a part where the temperature of the heating element is highest. The productivity of a silicon single crystal is improved by improving a crystallization speed.