METHOD OF SPUTTERING

PURPOSE: A sputtering method is provided to reduce manufacturing costs by forming a thin film with a high sputter rate regardless of an insulation film which is formed in the periphery region of a target. CONSTITUTION: A gas pipe pressure part(3) is connected to a sputter chamber(11). The gas pipe p...

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Bibliographische Detailangaben
Hauptverfasser:	KIYOTA JUNYA, KOBAYASHI MOTOSHI, ISHIBASHI TETSU, OISHI YUICHI, ARAI MAKOTO
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PURPOSE: A sputtering method is provided to reduce manufacturing costs by forming a thin film with a high sputter rate regardless of an insulation film which is formed in the periphery region of a target. CONSTITUTION: A gas pipe pressure part(3) is connected to a sputter chamber(11). The gas pipe pressure part is connected to a gas source part(33) through a gas pipe(32) including a mass flow controller(31). A target(41) applies a negative DC voltage through a sputter power part(E). The target is installed in the frame(44) of a magnetron sputter electrode(C) through an insulating plate(43). A shield(45), which can be used as an anode, is installed in the vicinity of the target.