METHOD FOR SUPPLYING SOURCE GAS

PURPOSE: A method for supplying source gas is provided to constantly control an amount of source gas inputted to a deposition chamber by referring to a value obtained by integrating partial pressure of source gas inputted to the deposition chamber on time. CONSTITUTION: A glass substrate is loaded o...

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Bibliographische Detailangaben
1. Verfasser:	JANG, HEE SUP
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE: A method for supplying source gas is provided to constantly control an amount of source gas inputted to a deposition chamber by referring to a value obtained by integrating partial pressure of source gas inputted to the deposition chamber on time. CONSTITUTION: A glass substrate is loaded on a deposition chamber(110). The deposition chamber provides a space for forming a film on the glass substrate. A pump(120) easily discharges gas from the deposition chamber. A source material depositing unit(130) stores source materials(132) to generate source gas supplied to the deposition chamber. A heater(134) is installed around the source material deposition unit. A carrier gas supply unit(140) supplies the source gas generated from the source gas deposition unit to the deposition chamber and the pump.