METHOD OF FORMING DEVICE ISOLATION STRUCTURE OF THE SEMICONDUCTOR DEVICE

PURPOSE: A method for forming an element isolation structure of a semiconductor device is provided to differentiate the depths of trenches by performing a patterning process twice. CONSTITUTION: A semiconductor substrate(21) is divided into a region I, a region II, and a region III. A pad oxide film...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HAN, JEON GUK, SHIM, BYUNG SUP, PARK, WEON HO, JEONG, YONG SIK
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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