METHOD OF FORMING DEVICE ISOLATION STRUCTURE OF THE SEMICONDUCTOR DEVICE

PURPOSE: A method for forming an element isolation structure of a semiconductor device is provided to differentiate the depths of trenches by performing a patterning process twice. CONSTITUTION: A semiconductor substrate(21) is divided into a region I, a region II, and a region III. A pad oxide film...

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Bibliographische Detailangaben
Hauptverfasser:	HAN, JEON GUK, SHIM, BYUNG SUP, PARK, WEON HO, JEONG, YONG SIK
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE: A method for forming an element isolation structure of a semiconductor device is provided to differentiate the depths of trenches by performing a patterning process twice. CONSTITUTION: A semiconductor substrate(21) is divided into a region I, a region II, and a region III. A pad oxide film(31) and a mask nitride film(32) are successively formed on the semiconductor substrate. A first photo-resist pattern(41) is formed on the mask nitride film. A hard mask pattern(33) is formed by partially eliminating the mask nitride film and the pad oxide film. The first photo-resist pattern and the hard mask pattern have openings(41A, 41B).