PLASMA ETCHING APPARATUS FOR ETCHING THE EDGE OF SUBSTRATE

PURPOSE: A plasma etching apparatus is provided to reduce a cost for installing facilities by regulating the etching rate of a wafer without the change of an etching machine. CONSTITUTION: A gas distribution plate(250) divides and supplies reactive gas and non-reactive gas. A substrate supporting st...

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1. Verfasser:	KWON, GI HYUN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	KWON, GI HYUN
description	PURPOSE: A plasma etching apparatus is provided to reduce a cost for installing facilities by regulating the etching rate of a wafer without the change of an etching machine. CONSTITUTION: A gas distribution plate(250) divides and supplies reactive gas and non-reactive gas. A substrate supporting stand(240) is installed on the lower side of the gas distribution plate and supports the substrate. An upper electrode assembly(210) is installed on the outer peripheral part of the gas distribution plate and generates plasma. A lower electrode assembly(220) is installed on the outer peripheral part of the substrate supporting stand and generates plasma.
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fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20100088769A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20100088769A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20100088769A3</originalsourceid><addsrcrecordid>eNrjZLAK8HEM9nVUcA1x9vD0c1dwDAhwDHIMCQ1WcPMPgouGeLgquLq4uyr4uykEhzoFhwCVuPIwsKYl5hSn8kJpbgZlN5AG3dSC_PjU4oLE5NS81JJ47yAjA0MDAwMLC3MzS0dj4lQBADqKKbE</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PLASMA ETCHING APPARATUS FOR ETCHING THE EDGE OF SUBSTRATE</title><source>esp@cenet</source><creator>KWON, GI HYUN</creator><creatorcontrib>KWON, GI HYUN</creatorcontrib><description>PURPOSE: A plasma etching apparatus is provided to reduce a cost for installing facilities by regulating the etching rate of a wafer without the change of an etching machine. CONSTITUTION: A gas distribution plate(250) divides and supplies reactive gas and non-reactive gas. A substrate supporting stand(240) is installed on the lower side of the gas distribution plate and supports the substrate. An upper electrode assembly(210) is installed on the outer peripheral part of the gas distribution plate and generates plasma. A lower electrode assembly(220) is installed on the outer peripheral part of the substrate supporting stand and generates plasma.</description><language>eng ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2010</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20100811&DB=EPODOC&CC=KR&NR=20100088769A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20100811&DB=EPODOC&CC=KR&NR=20100088769A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KWON, GI HYUN</creatorcontrib><title>PLASMA ETCHING APPARATUS FOR ETCHING THE EDGE OF SUBSTRATE</title><description>PURPOSE: A plasma etching apparatus is provided to reduce a cost for installing facilities by regulating the etching rate of a wafer without the change of an etching machine. CONSTITUTION: A gas distribution plate(250) divides and supplies reactive gas and non-reactive gas. A substrate supporting stand(240) is installed on the lower side of the gas distribution plate and supports the substrate. An upper electrode assembly(210) is installed on the outer peripheral part of the gas distribution plate and generates plasma. A lower electrode assembly(220) is installed on the outer peripheral part of the substrate supporting stand and generates plasma.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2010</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAK8HEM9nVUcA1x9vD0c1dwDAhwDHIMCQ1WcPMPgouGeLgquLq4uyr4uykEhzoFhwCVuPIwsKYl5hSn8kJpbgZlN5AG3dSC_PjU4oLE5NS81JJ47yAjA0MDAwMLC3MzS0dj4lQBADqKKbE</recordid><startdate>20100811</startdate><enddate>20100811</enddate><creator>KWON, GI HYUN</creator><scope>EVB</scope></search><sort><creationdate>20100811</creationdate><title>PLASMA ETCHING APPARATUS FOR ETCHING THE EDGE OF SUBSTRATE</title><author>KWON, GI HYUN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20100088769A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2010</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KWON, GI HYUN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KWON, GI HYUN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PLASMA ETCHING APPARATUS FOR ETCHING THE EDGE OF SUBSTRATE</title><date>2010-08-11</date><risdate>2010</risdate><abstract>PURPOSE: A plasma etching apparatus is provided to reduce a cost for installing facilities by regulating the etching rate of a wafer without the change of an etching machine. CONSTITUTION: A gas distribution plate(250) divides and supplies reactive gas and non-reactive gas. A substrate supporting stand(240) is installed on the lower side of the gas distribution plate and supports the substrate. An upper electrode assembly(210) is installed on the outer peripheral part of the gas distribution plate and generates plasma. A lower electrode assembly(220) is installed on the outer peripheral part of the substrate supporting stand and generates plasma.</abstract><oa>free_for_read</oa></addata></record>
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	PLASMA ETCHING APPARATUS FOR ETCHING THE EDGE OF SUBSTRATE
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-10T19%3A55%3A12IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KWON,%20GI%20HYUN&rft.date=2010-08-11&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EKR20100088769A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true