PLASMA ETCHING APPARATUS FOR ETCHING THE EDGE OF SUBSTRATE

PLASMA ETCHING APPARATUS FOR ETCHING THE EDGE OF SUBSTRATE

PURPOSE: A plasma etching apparatus is provided to reduce a cost for installing facilities by regulating the etching rate of a wafer without the change of an etching machine. CONSTITUTION: A gas distribution plate(250) divides and supplies reactive gas and non-reactive gas. A substrate supporting st...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: KWON, GI HYUN
Format: Patent
Sprache:eng ; kor
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PURPOSE: A plasma etching apparatus is provided to reduce a cost for installing facilities by regulating the etching rate of a wafer without the change of an etching machine. CONSTITUTION: A gas distribution plate(250) divides and supplies reactive gas and non-reactive gas. A substrate supporting stand(240) is installed on the lower side of the gas distribution plate and supports the substrate. An upper electrode assembly(210) is installed on the outer peripheral part of the gas distribution plate and generates plasma. A lower electrode assembly(220) is installed on the outer peripheral part of the substrate supporting stand and generates plasma.