OPERATING METHOD OF NON VOLATILE MEMORY DEVICE

PURPOSE: An operating method of a non volatile memory device are provided to preventing read out disturbance by discharging boosted charges according to a pass voltage. CONSTITUTION: A selected bit line is precharged with a high level. Non-selected bit line is discharged with a low level. The whole...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: HAN, JUNG CHUL
Format: Patent
Sprache:eng ; kor
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator HAN, JUNG CHUL
description PURPOSE: An operating method of a non volatile memory device are provided to preventing read out disturbance by discharging boosted charges according to a pass voltage. CONSTITUTION: A selected bit line is precharged with a high level. Non-selected bit line is discharged with a low level. The whole bit lines are connected to the cell string of each memory cell. A pass voltage is applied to the whole word line. The connection of each memory cell string and the whole bit line is blocked. A ground voltage is applied to the selected word line. The whole bit lines are connected to each memory cell string. The reference voltage and pass voltage are applied to the selected word line and the non-selected word line.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20100085660A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20100085660A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20100085660A3</originalsourceid><addsrcrecordid>eNrjZNDzD3ANcgzx9HNX8HUN8fB3UfB3U_Dz91MI8_cBCvu4AoV9_YMiFVxcwzydXXkYWNMSc4pTeaE0N4Oym2uIs4duakF-fGpxQWJyal5qSbx3kJGBoYGBgYWpmZmBozFxqgBwDiZ8</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>OPERATING METHOD OF NON VOLATILE MEMORY DEVICE</title><source>esp@cenet</source><creator>HAN, JUNG CHUL</creator><creatorcontrib>HAN, JUNG CHUL</creatorcontrib><description>PURPOSE: An operating method of a non volatile memory device are provided to preventing read out disturbance by discharging boosted charges according to a pass voltage. CONSTITUTION: A selected bit line is precharged with a high level. Non-selected bit line is discharged with a low level. The whole bit lines are connected to the cell string of each memory cell. A pass voltage is applied to the whole word line. The connection of each memory cell string and the whole bit line is blocked. A ground voltage is applied to the selected word line. The whole bit lines are connected to each memory cell string. The reference voltage and pass voltage are applied to the selected word line and the non-selected word line.</description><language>eng ; kor</language><subject>INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2010</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20100729&amp;DB=EPODOC&amp;CC=KR&amp;NR=20100085660A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20100729&amp;DB=EPODOC&amp;CC=KR&amp;NR=20100085660A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HAN, JUNG CHUL</creatorcontrib><title>OPERATING METHOD OF NON VOLATILE MEMORY DEVICE</title><description>PURPOSE: An operating method of a non volatile memory device are provided to preventing read out disturbance by discharging boosted charges according to a pass voltage. CONSTITUTION: A selected bit line is precharged with a high level. Non-selected bit line is discharged with a low level. The whole bit lines are connected to the cell string of each memory cell. A pass voltage is applied to the whole word line. The connection of each memory cell string and the whole bit line is blocked. A ground voltage is applied to the selected word line. The whole bit lines are connected to each memory cell string. The reference voltage and pass voltage are applied to the selected word line and the non-selected word line.</description><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2010</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNDzD3ANcgzx9HNX8HUN8fB3UfB3U_Dz91MI8_cBCvu4AoV9_YMiFVxcwzydXXkYWNMSc4pTeaE0N4Oym2uIs4duakF-fGpxQWJyal5qSbx3kJGBoYGBgYWpmZmBozFxqgBwDiZ8</recordid><startdate>20100729</startdate><enddate>20100729</enddate><creator>HAN, JUNG CHUL</creator><scope>EVB</scope></search><sort><creationdate>20100729</creationdate><title>OPERATING METHOD OF NON VOLATILE MEMORY DEVICE</title><author>HAN, JUNG CHUL</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20100085660A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2010</creationdate><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>HAN, JUNG CHUL</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HAN, JUNG CHUL</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>OPERATING METHOD OF NON VOLATILE MEMORY DEVICE</title><date>2010-07-29</date><risdate>2010</risdate><abstract>PURPOSE: An operating method of a non volatile memory device are provided to preventing read out disturbance by discharging boosted charges according to a pass voltage. CONSTITUTION: A selected bit line is precharged with a high level. Non-selected bit line is discharged with a low level. The whole bit lines are connected to the cell string of each memory cell. A pass voltage is applied to the whole word line. The connection of each memory cell string and the whole bit line is blocked. A ground voltage is applied to the selected word line. The whole bit lines are connected to each memory cell string. The reference voltage and pass voltage are applied to the selected word line and the non-selected word line.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng ; kor
recordid cdi_epo_espacenet_KR20100085660A
source esp@cenet
subjects INFORMATION STORAGE
PHYSICS
STATIC STORES
title OPERATING METHOD OF NON VOLATILE MEMORY DEVICE
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-10T23%3A15%3A34IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=HAN,%20JUNG%20CHUL&rft.date=2010-07-29&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EKR20100085660A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true