OPERATING METHOD OF NON VOLATILE MEMORY DEVICE

PURPOSE: An operating method of a non volatile memory device are provided to preventing read out disturbance by discharging boosted charges according to a pass voltage. CONSTITUTION: A selected bit line is precharged with a high level. Non-selected bit line is discharged with a low level. The whole bit lines are connected to the cell string of each memory cell. A pass voltage is applied to the whole word line. The connection of each memory cell string and the whole bit line is blocked. A ground voltage is applied to the selected word line. The whole bit lines are connected to each memory cell string. The reference voltage and pass voltage are applied to the selected word line and the non-selected word line.