UNIT PIXEL IN IMAGE SENSOR AND METHOD FOR MANUFACTURING THEREOF

PURPOSE: A unit pixel of an image sensor and a manufacturing method thereof are provided to improve the capacity of a photo diode by controlling the amount of implant doses of the photo diode independently of a photo charge transmission property. CONSTITUTION: A photo diode area and a transistor are...

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Bibliographische Detailangaben
1. Verfasser:	PARK, DONG BIN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE: A unit pixel of an image sensor and a manufacturing method thereof are provided to improve the capacity of a photo diode by controlling the amount of implant doses of the photo diode independently of a photo charge transmission property. CONSTITUTION: A photo diode area and a transistor area are formed on a semiconductor substrate(100). A step unit is formed on the semiconductor substrate so that the photo diode area has the lower surface than that of the transistor area. A channel region(120) is formed on the semiconductor substrate corresponding to the transistor area. An insulation layer(130) and a gate(140) are formed on the channel region. A photo diode(150) is formed on the photo diode area. A signal transmission unit is formed on the step unit to connect the photo diode and the channel region. A floating diffusion unit(170) is formed on the semiconductor substrate to be arranged on the other side of the gate.