UNIT PIXEL IN IMAGE SENSOR AND METHOD FOR MANUFACTURING THEREOF

PURPOSE: A unit pixel and a manufacturing method thereof are provided to improve a property of capacity and dark signal of a photo diode by differently forming the doping concentration in a channel region. CONSTITUTION: A semiconductor substrate(100) defines a transistor reserved area(TA). A channel...

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1. Verfasser:	PARK, DONG BIN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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