UNIT PIXEL IN IMAGE SENSOR AND METHOD FOR MANUFACTURING THEREOF
PURPOSE: A unit pixel and a manufacturing method thereof are provided to improve a property of capacity and dark signal of a photo diode by differently forming the doping concentration in a channel region. CONSTITUTION: A semiconductor substrate(100) defines a transistor reserved area(TA). A channel...
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| Format: | Patent |
| Sprache: | eng ; kor |
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| Zusammenfassung: | PURPOSE: A unit pixel and a manufacturing method thereof are provided to improve a property of capacity and dark signal of a photo diode by differently forming the doping concentration in a channel region. CONSTITUTION: A semiconductor substrate(100) defines a transistor reserved area(TA). A channel region(120) is formed in the semiconductor substrate corresponding to the transistor reserved area. A gate insulating layer(130) is formed on the channel region. A gate(140) is formed on the gate insulating layer. A photo diode(150) is arranged in one side of the gate. A floating diffusion part(160) is arranged in the other side of the gate. |
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