UNIT PIXEL IN IMAGE SENSOR AND METHOD FOR MANUFACTURING THEREOF

PURPOSE: A unit pixel of an image sensor and a manufacturing method thereof are provided to optimize the potential barrier of the channel area formed at the lower part of a gate by differently forming the doped concentration of a gate adjacent to a floating diffusion part and a gate adjacent to a ph...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
1. Verfasser:	PARK, DONG BIN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PURPOSE: A unit pixel of an image sensor and a manufacturing method thereof are provided to optimize the potential barrier of the channel area formed at the lower part of a gate by differently forming the doped concentration of a gate adjacent to a floating diffusion part and a gate adjacent to a photo diode. CONSTITUTION: A doped region is formed in a gate(140) and one side and the other side from the center of a channel region(120) have different impurity distribution. A photo diode(160) is formed in a semiconductor substrate(100) in order to be aligned with one side of the gate. A floating diffusion part(170) is formed in the semiconductor substrate in order to be aligned with the other side of the gate. The doped region contiguous to the photo diode is formed with wholly uniform impurity distribution and the doped region contiguous to the floating diffusion part is formed only in the shallow region of the gate.