UNIT PIXEL IN IMAGE SENSOR AND METHOD FOR MANUFACTURING THEREOF
PURPOSE: A unit pixel of an image sensor and a manufacturing method thereof are provided to increase the capacity of a photo diode regardless of the transmission characteristics of photo-charge. CONSTITUTION: A gate(30) of a transfer transistor(Tx) is formed on the semiconductor substrate. A first d...
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| Format: | Patent |
| Sprache: | eng ; kor |
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| Zusammenfassung: | PURPOSE: A unit pixel of an image sensor and a manufacturing method thereof are provided to increase the capacity of a photo diode regardless of the transmission characteristics of photo-charge. CONSTITUTION: A gate(30) of a transfer transistor(Tx) is formed on the semiconductor substrate. A first doped area(40) is formed in the deep area of the semiconductor substrate of one side of the gate. First impurities are formed to be overlaid with the gate. A second doped area(50) is formed in the deep area of the semiconductor substrate corresponding to the part between the first doped area and the second doped area. |
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