METHOD FOR FABRICATING A SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR SUBSTRATE

PURPOSE: A method for fabricating a semiconductor substrate and a semiconductor substrate are provided to have improved photon / electron conversion efficiency under a short wavelength of a blue light. CONSTITUTION: A semiconductor substrate on a dielectric material includes a base layer(3), a insul...

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Bibliographische Detailangaben
Hauptverfasser:	FIGUET CHRISTOPHE, DROUIN ALEXIS, BOUVIER CHRISTOPHE, MAURICE THIBAUT, CAILLER CELINE
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE
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Beschreibung
Zusammenfassung:	PURPOSE: A method for fabricating a semiconductor substrate and a semiconductor substrate are provided to have improved photon / electron conversion efficiency under a short wavelength of a blue light. CONSTITUTION: A semiconductor substrate on a dielectric material includes a base layer(3), a insulating layer(5), and a first semiconductor layer having a first dopant concentration. A diffused layer is provided. The second semiconductor layer(11) has a second dopant concentration different from a first dopant concentration and includes same material as the first semiconductor layer.