SEMICONDUCTOR MEMORY DEVICE

PURPOSE: A semiconductor memory device is provided to steadily implement an operation with decoding a row address by changing a swing domain of a control signal provided to a row address decoding circuit in an operation environment including relatively low potential level of a power supply. CONSTITUTION: A first level shifting unit(602) is level shifting a maximum level of an active command with swing between a potential level of a power supply voltage and the potential level of a ground voltage to a step-up voltage. A second level shifting unit is level shifting a lower limit level of a signal outputted from the first level shifting unit to a pressure reducing voltage. The second level shifting unit outputs a word line driving control signal. A row address decoding unit(622) decodes the row address with receiving the step-up voltage and the pressure reducing voltage in response to the word line driving control signal. The row address decoding unit selectively activates a plurality of word lines(WL 0~WL N).