PHASE CHANGEABLE MEMORY DEVICE HAVING DIELECTRIC LAYER FOR ISOLATING CONTACT STRUCTURES FORMED BY GROWTH, SEMICONDUCTOR MEMORY DEVICE HAVING THE SAME, AND METHODS OF MANUFACTURING THE SAME AND THE SEMICONDUCTOR DEVICE

PURPOSE: A phase changeable memory device, a semiconductor device including the same and a method for manufacturing the memory device and the semiconductor device are provided to reduce a compressive stress which affects to the operation of a driving transistor using a tensile stress interlayer insu...

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Bibliographische Detailangaben

1. Verfasser:	CHANG, HEON YONG
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	ELECTRICITY
Online-Zugang:	Volltext bestellen
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