PHASE CHANGEABLE MEMORY DEVICE HAVING DIELECTRIC LAYER FOR ISOLATING CONTACT STRUCTURES FORMED BY GROWTH, SEMICONDUCTOR MEMORY DEVICE HAVING THE SAME, AND METHODS OF MANUFACTURING THE SAME AND THE SEMICONDUCTOR DEVICE

PURPOSE: A phase changeable memory device, a semiconductor device including the same and a method for manufacturing the memory device and the semiconductor device are provided to reduce a compressive stress which affects to the operation of a driving transistor using a tensile stress interlayer insulation layer as an interlayer insulation layer. CONSTITUTION: An impurity region(105) is defined on a semiconductor substrate(100). A tensile stress interlayer insulation layer is formed on the upper side of the semiconductor substrate. A contact hole which exposes the impurity region is formed on the tensile stress interlayer insulation layer. A switching unit is formed in the contact hole. A sidewall spacer(120) is a compressive insulation layer. The compressive insulation layer is interposed between the switching unit and the interlayer insulation layer.