SPUTTERING CHAMBER HAVING ICP COIL AND TARGETS ON TOP WALL

SPUTTERING CHAMBER HAVING ICP COIL AND TARGETS ON TOP WALL

PURPOSE: A sputtering chamber having ICP(Inductively Coupled Plasma) coil and targets on top wall is provided to prevent the contamination of a wafer caused by an induction coil by installing the induction coil on the vacuum outside of a chamber. CONSTITUTION: A chamber(30) can be sealed in order to...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: CALEBOTTA GABRIEL A, MULLAPUDI RAVI, NINAN BIJU
Format: Patent
Sprache:eng ; kor
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PURPOSE: A sputtering chamber having ICP(Inductively Coupled Plasma) coil and targets on top wall is provided to prevent the contamination of a wafer caused by an induction coil by installing the induction coil on the vacuum outside of a chamber. CONSTITUTION: A chamber(30) can be sealed in order to create a low-pressure environment inside. A pallet(36) within the chamber has at least one product support region for supporting a product. A target(40) is located on an upper wall of the chamber. A magnet(60) is placed in opposition with a back side of the target. A flat first induction coil(64) materially touches the palette.