ELECTROSTATIC DISCHARGE DIODE

PURPOSE: An electrostatic discharge diode is provided to protect a semiconductor circuit from electrostatic discharge and electrostatic surge by including doped diodes with high concentration and doped diodes with low concentration. CONSTITUTION: An n-type well(20) is formed on a substrate. An n- region(30) is formed on the n-type well. P- regions(40a to 40f) are infiltrated into the n- region. N+ regions(50a to 50g) are infiltrated into a first layer including the n- region and the p- regions. P+ regions(60a to 60f) are infiltrated into the first layer. One n+ region of the n+ regions and one p+ region of the p+ regions are infiltrated into different p- regions.