METHOD FOR FORMING SEMICONDUCTOR DEVICE

PURPOSE: A method for forming a semiconductor device is provided to prevent contact not open by increasing an etch margin. CONSTITUTION: A first insulating layer(43) covers a conductive pattern(42). The first contact hole(44) exposes the conductive pattern. The first insulating layer selectively is...

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Bibliographische Detailangaben
1. Verfasser:	LEE, KEE JUNE
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE: A method for forming a semiconductor device is provided to prevent contact not open by increasing an etch margin. CONSTITUTION: A first insulating layer(43) covers a conductive pattern(42). The first contact hole(44) exposes the conductive pattern. The first insulating layer selectively is etched and the first contact hole is formed. The first contact hole is buried with a sacrifice plug. The second insulating layer(46) is formed on the first insulating layer. The second insulating layer selectively is etched and the second contact hole(47) is formed. The second contact hole exposes the sacrifice plug to the outside. The sacrifice plug is removed. A contact hole is formed by burying the first contact hole and the second contact hole.