METHOD AND STRUCTURE FOR REDUCING CRACKS IN A DIELECTRIC LAYER IN CONTACT WITH METAL

METHOD AND STRUCTURE FOR REDUCING CRACKS IN A DIELECTRIC LAYER IN CONTACT WITH METAL

A method and structure for reducing cracks in a dielectric (40) in contact with a metal structure (20). The metal structure comprises a first metal layer (26); a second metal layer (30) disposed on, and in contact with the first metal layer, the second metal layer having a higher young' s modul...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LILES BARRY J, WHELAN COLIN S
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method and structure for reducing cracks in a dielectric (40) in contact with a metal structure (20). The metal structure comprises a first metal layer (26); a second metal layer (30) disposed on, and in contact with the first metal layer, the second metal layer having a higher young' s modular of elasticity than the first metal layer; a third metal layer (32) disposed on, and in contact with the second metal layer, the second metal layer having a higher young's modular of elasticity than the third metal layer. An additional metal (50) is included wherein the dielectric layer is disposed between the metal structure and the additional metal.