METHOD FOR FABRICATING NON-VOLATILE RANDOM ACCESS MEMORY

PURPOSE: A method for fabricating a non-volatile random access memory is provide to decrease the height of an effective oxide by forming a protective film on a polysilicon layer while lowering the thickness of HDP(High Density Plasma) oxidation. CONSTITUTION: A tunnel dielectric(12) is formed on a substrate(11). A polysilicon layer(13) is formed on the tunnel insulating layer. A hard mask pattern is formed on the polysilicon layer. The polysilicon layer and substrate are etched by using a hard mask pattern as an etch barrier and a trench is formed. A liner oxidation layer(16) is formed according to the step height of the overall structure. The HDP oxidation layer(17A) is buried to the trench. A part thickness of the HDP oxidation layer is etched while forming a protective film(18) on the polysilicon pattern.