METHOD FOR FABRICATING THE SEMICONDUCTOR DEVICE

PURPOSE: A method for manufacturing a semiconductor device is provided to suppress a step when depositing a following SOG(Silicon On Glass) film by forming a silicon oxidation layer on an upper side of a metal wiring pattern on an area with high pattern density between the metal wiring patterns. CONSTITUTION: A metal wiring pattern(215) which is comprised of a non-metal material layer and includes a conductive layer is formed on a substrate(200). The metal wiring pattern is divided into a dense area and a spare area according to the density. The non-metal material layer on the dense area is removed from the metal wiring pattern. An interlayer insulation layer(240) is deposited on the upper side including the metal wiring pattern. A contact hole(245) to expose the conductive layer of the metal wiring pattern is formed by etching the interlayer insulation layer and the non-metal material layer. The non-metal material layer includes a silicon layer.