SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

PURPOSE: A semiconductor device and a method of manufacturing the same are provided to improve the characteristics and reliability of a semiconductor by preventing lifting of a wiring structure and the crack between the wiring and a capacitor. CONSTITUTION: A substrate has a cell array region and a peripheral circuit region. A substructure is formed on the cell array region. A first insulating layer(112) is formed in the cell array region and the peripheral circuit region. A capacitor is formed on the first insulating layer of the cell array region and comprises a bottom electrode, a dielectric layer pattern, and an upper electrode. A second insulating layer(116) is formed on the first insulating layer and it covers the capacitor. The upper wiring structure it is formed on the second insulating layer and it comprises the upper wiring and a mask pattern while being electrically connected to the capacitor. At least one dummy structure(140) is formed in the peripheral circuit region of substrate.