CU(II) COMPLEX, METHOD FOR MANUFACTURING THE SAME, METHOD FOR MANUFACTURING COPPER THIN FILM USING THE SAME AND SEMICONDUCTOR SUBSTRATE MANUFACTURED BY USING THE SAME

PURPOSE: A bivalent copper complex compound and a method for preparing the copper thin film using the same are provided to ensure excellent deposition characteristic and easily produce the copper thin film having excellent step coverage on the substrate. CONSTITUTION: A bivalent copper complex compo...

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Bibliographische Detailangaben
Hauptverfasser: KIM, SEOK SEON, SIM, JAE YONG, YANG, IL DOO, CHA, DU HWAN, KIM, SU BONG
Format: Patent
Sprache:eng
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Zusammenfassung:PURPOSE: A bivalent copper complex compound and a method for preparing the copper thin film using the same are provided to ensure excellent deposition characteristic and easily produce the copper thin film having excellent step coverage on the substrate. CONSTITUTION: A bivalent copper complex compound of chemical formula is used for forming copper thin film. The bivalent copper complex compound is synthesized by reacting amine compound with the compound of chemical formula under the presence of organic solvent. The bivalent copper complex compound has amine compound-coordinated copper atom. The synthesis is performed at -10~30°C for 30 minutes to 24 hours. The organic solvent is ether, dichloromethane, normal hexane, or toluene. The bivalent copper complex compound for forming copper thin film is evaporated at from room temperature to 100°C and deposited on a substrate through chemical vapor deposition or atomic layer deposition.