ROLL-TO-ROLL PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION METHOD OF BARRIER LAYERS COMPRISING SILICON AND CARBON

ROLL-TO-ROLL PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION METHOD OF BARRIER LAYERS COMPRISING SILICON AND CARBON

The present invention provides method and process for forming a barrier layer on a flexible substrate. The continuous roll-to-roll method includes providing a substrate to a processing chamber using at least one roller configured to guide the substrate through the processing chamber. The process inc...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: ZAMBOV LUDMIL M, WEIDNER WILLIAM K, SHAMAMIAN VASGEN A, CERNY GLENN A, SNOW STEVE A, LOBODA MARK J
Format: Patent
Sprache:eng
Schlagworte:
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The present invention provides method and process for forming a barrier layer on a flexible substrate. The continuous roll-to-roll method includes providing a substrate to a processing chamber using at least one roller configured to guide the substrate through the processing chamber. The process includes depositing a barrier layer adjacent the substrate by exposing at least one portion of the substrate that is within the processing chamber to plasma comprising a silicon-and-carbon containing precursor gas. The present invention is further directed to a coated flexible substrates comprising a barrier layer based on the structural unit SiC:H. The barrier layer possesses high density and low porosity. Still further, the barrier layer exhibits low water vapor transmission rate (WVTR) in the range of 10-10g.mdand is appropriate for very low permeability applications.