SEMICONDUCTOR DEVICE HAVING TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

PURPOSE: A semiconductor device including a transistor and a manufacturing method thereof are provided to prevent hump by forming an active region with an edge, a center, and a gate with different doping density. CONSTITUTION: An active region(114) is defined by a device isolation region(112) on a substrate(110). The active region includes an edge part adjacent to the device isolation region and a center part surrounded with the edge part. A gate electrode(120) is formed on the active region and the device isolation region. The gate electrode includes a center gate part(120C) covering the center part of the active region, an edge gate part covering the edge part of the active region, and a first impurity doping region of a first conductive type formed in the center gate part. A gate insulation layer(118) is interposed between the active region and the gate electrode.