METHOD OF FABRICATING SEMICONDUCTOR CHIP PACKAGE, SEMICONDUCTOR WAFER AND METHOD OF SAWING THE SAME
PURPOSE: A manufacturing method of a semiconductor chip package, a semiconductor wafer, and a cutting method thereof are provided to prevent damage to a wafer due to a laser used in cutting an encapsulation layer by successively irradiating at least two kinds of lasers to a scribe lane. CONSTITUTION...
Gespeichert in:
Hauptverfasser: | , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | KIM, PYOUNG WAN LEE, TAEK HOON KIM, NAM SEOG |
description | PURPOSE: A manufacturing method of a semiconductor chip package, a semiconductor wafer, and a cutting method thereof are provided to prevent damage to a wafer due to a laser used in cutting an encapsulation layer by successively irradiating at least two kinds of lasers to a scribe lane. CONSTITUTION: A protection layer(150) is formed on a scribe lane(103) of a wafer(100) in which a plurality of semiconductor chips(101,102) is formed. An encapsulation layer(190) is formed on a top part of the protection layer and the semiconductor chips. The semiconductor chips are divided by successively irradiating at least two kinds of lasers to the scribe lane in which the protection layer is formed. The encapsulation layer formed on the top part of the protection layer is cut by irradiating a first laser to the scribe lane. The protection layer and the wafer are cut by irradiating a second laser having a wavelength lower than the first laser to the scribe lane. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20090123280A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20090123280A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20090123280A3</originalsourceid><addsrcrecordid>eNrjZEj2dQ3x8HdR8HdTcHN0CvJ0dgzx9HNXCHb19XT293MJdQ7xD1Jw9vAMUAhwdPZ2dHfVQZMLd3RzDVJw9HNRQJgU7BgOMiTEwxXI9HXlYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXx3kFGBgaWBoZGxkYWBo7GxKkCAK3mNJQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD OF FABRICATING SEMICONDUCTOR CHIP PACKAGE, SEMICONDUCTOR WAFER AND METHOD OF SAWING THE SAME</title><source>esp@cenet</source><creator>KIM, PYOUNG WAN ; LEE, TAEK HOON ; KIM, NAM SEOG</creator><creatorcontrib>KIM, PYOUNG WAN ; LEE, TAEK HOON ; KIM, NAM SEOG</creatorcontrib><description>PURPOSE: A manufacturing method of a semiconductor chip package, a semiconductor wafer, and a cutting method thereof are provided to prevent damage to a wafer due to a laser used in cutting an encapsulation layer by successively irradiating at least two kinds of lasers to a scribe lane. CONSTITUTION: A protection layer(150) is formed on a scribe lane(103) of a wafer(100) in which a plurality of semiconductor chips(101,102) is formed. An encapsulation layer(190) is formed on a top part of the protection layer and the semiconductor chips. The semiconductor chips are divided by successively irradiating at least two kinds of lasers to the scribe lane in which the protection layer is formed. The encapsulation layer formed on the top part of the protection layer is cut by irradiating a first laser to the scribe lane. The protection layer and the wafer are cut by irradiating a second laser having a wavelength lower than the first laser to the scribe lane.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2009</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20091202&DB=EPODOC&CC=KR&NR=20090123280A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20091202&DB=EPODOC&CC=KR&NR=20090123280A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KIM, PYOUNG WAN</creatorcontrib><creatorcontrib>LEE, TAEK HOON</creatorcontrib><creatorcontrib>KIM, NAM SEOG</creatorcontrib><title>METHOD OF FABRICATING SEMICONDUCTOR CHIP PACKAGE, SEMICONDUCTOR WAFER AND METHOD OF SAWING THE SAME</title><description>PURPOSE: A manufacturing method of a semiconductor chip package, a semiconductor wafer, and a cutting method thereof are provided to prevent damage to a wafer due to a laser used in cutting an encapsulation layer by successively irradiating at least two kinds of lasers to a scribe lane. CONSTITUTION: A protection layer(150) is formed on a scribe lane(103) of a wafer(100) in which a plurality of semiconductor chips(101,102) is formed. An encapsulation layer(190) is formed on a top part of the protection layer and the semiconductor chips. The semiconductor chips are divided by successively irradiating at least two kinds of lasers to the scribe lane in which the protection layer is formed. The encapsulation layer formed on the top part of the protection layer is cut by irradiating a first laser to the scribe lane. The protection layer and the wafer are cut by irradiating a second laser having a wavelength lower than the first laser to the scribe lane.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2009</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZEj2dQ3x8HdR8HdTcHN0CvJ0dgzx9HNXCHb19XT293MJdQ7xD1Jw9vAMUAhwdPZ2dHfVQZMLd3RzDVJw9HNRQJgU7BgOMiTEwxXI9HXlYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXx3kFGBgaWBoZGxkYWBo7GxKkCAK3mNJQ</recordid><startdate>20091202</startdate><enddate>20091202</enddate><creator>KIM, PYOUNG WAN</creator><creator>LEE, TAEK HOON</creator><creator>KIM, NAM SEOG</creator><scope>EVB</scope></search><sort><creationdate>20091202</creationdate><title>METHOD OF FABRICATING SEMICONDUCTOR CHIP PACKAGE, SEMICONDUCTOR WAFER AND METHOD OF SAWING THE SAME</title><author>KIM, PYOUNG WAN ; LEE, TAEK HOON ; KIM, NAM SEOG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20090123280A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2009</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KIM, PYOUNG WAN</creatorcontrib><creatorcontrib>LEE, TAEK HOON</creatorcontrib><creatorcontrib>KIM, NAM SEOG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KIM, PYOUNG WAN</au><au>LEE, TAEK HOON</au><au>KIM, NAM SEOG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD OF FABRICATING SEMICONDUCTOR CHIP PACKAGE, SEMICONDUCTOR WAFER AND METHOD OF SAWING THE SAME</title><date>2009-12-02</date><risdate>2009</risdate><abstract>PURPOSE: A manufacturing method of a semiconductor chip package, a semiconductor wafer, and a cutting method thereof are provided to prevent damage to a wafer due to a laser used in cutting an encapsulation layer by successively irradiating at least two kinds of lasers to a scribe lane. CONSTITUTION: A protection layer(150) is formed on a scribe lane(103) of a wafer(100) in which a plurality of semiconductor chips(101,102) is formed. An encapsulation layer(190) is formed on a top part of the protection layer and the semiconductor chips. The semiconductor chips are divided by successively irradiating at least two kinds of lasers to the scribe lane in which the protection layer is formed. The encapsulation layer formed on the top part of the protection layer is cut by irradiating a first laser to the scribe lane. The protection layer and the wafer are cut by irradiating a second laser having a wavelength lower than the first laser to the scribe lane.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_KR20090123280A |
source | esp@cenet |
subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | METHOD OF FABRICATING SEMICONDUCTOR CHIP PACKAGE, SEMICONDUCTOR WAFER AND METHOD OF SAWING THE SAME |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-13T08%3A49%3A03IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KIM,%20PYOUNG%20WAN&rft.date=2009-12-02&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EKR20090123280A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |