LIGHT EMITTING DIODE AND METHOD FOR FABRICATING THE SAME

PURPOSE: A light emitting diode and a manufacturing method thereof are provided to improve external quantum efficiency by forming an uneven structure inside a surface of an insulation protecting layer. CONSTITUTION: A light emitting structure includes a first clad layer(21), an active layer(25), and a second clad layer(27). An insulation protecting layer(55) is positioned on a sidewall and a top part of the light emitting structure, and exposes a bottom surface of the light emitting structure. A first electrode(45) and a second electrode(43) are electrically connected to the first clad layer and the second clad layer. The first electrode and the second electrode are exposed in both sides of the bottom surface of the light emitting structure. The insulation protecting layer includes phosphor and a passivation layer laminated in the light emitting structure. A sealing layer is positioned on the passivation layer.