METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

PURPOSE: A manufacturing method of a semiconductor device is provided to prevent a short between an active region and a control gate of a semiconductor substrate by reducing a loss of a conductive film for capping in between conductive films for a floating gate after an ONC(Oxide-Nitride-Oxide Contact) hole is formed. CONSTITUTION: A first conductive film is formed in an active region. An isolation film is formed in an isolation region, and exposes a top sidewall of the first conductive film(104). In a semiconductor substrate, a dielectric film(110), a conductive film(112) for capping, and an organic antireflective film are laminated on the isolation film(108) and the first conductive film. The organic antireflective film of a region in which a contact hole is formed inside a select line is etched through a first dry etching process. The conductive film for capping is etched through a second dry etching process having a sputtering etching property. The contact hole is formed inside the conductive film for capping and the dielectric film by etching the dielectric film through a third dry etching process.