FABRICATION METHOD OF SEMICONDUCTOR DEVICE

PURPOSE: A fabrication method of a semiconductor device is provided to simplify a process and reduce time and costs by applying one of two silicide barriers to one dual stress liner. CONSTITUTION: In a fabrication method of a semiconductor device, a gate electrode(110) and source/drain regions(104,1...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SON, SAE IL, SHIN, HONG JAE, LEE, JUNG DEOG, LEE, JUNG HOON, KIM, SANG DOO, NAM, SEO WOO, KWON, SANG WOOK
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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