METHOD FOR FABRICATING METAL LINE USING ADSORPTION INHIBITOR IN SEMICONDUCTOR DEVICE
PURPOSE: A method for fabricating metal line using adsorption inhibitor in semiconductor device is provided to secure the reliability of the metal wiring and semiconductor device. CONSTITUTION: The insulating layer(110) is formed on the semiconductor substrate(100). The trench or the via hall of the...
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| Sprache: | eng ; kor |
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| Zusammenfassung: | PURPOSE: A method for fabricating metal line using adsorption inhibitor in semiconductor device is provided to secure the reliability of the metal wiring and semiconductor device. CONSTITUTION: The insulating layer(110) is formed on the semiconductor substrate(100). The trench or the via hall of the constant pattern is formed on the insulating layer. The deposition process for the conducting material is performed. The adsorption suppression process for restraining the adsorption of the conducting material is performed. The process of removing the conductive layer is performed to expose the insulating layer. The metal wiring(150c) is formed by removing the conductive layer. |
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