METHOD FOR FABRICATING PHASE SHIFT MASK USING OXIDATION TREATMENT

A method for fabricating a phase shift mask using an oxidation treatment is provided to improve the reflectivity of a pattern surface by suppressing a material which is generated in forming the pattern and a cause of a failure. In a method for fabricating a phase shift mask using an oxidation treatm...

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Bibliographische Detailangaben
1. Verfasser:	JO, SANG JIN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A method for fabricating a phase shift mask using an oxidation treatment is provided to improve the reflectivity of a pattern surface by suppressing a material which is generated in forming the pattern and a cause of a failure. In a method for fabricating a phase shift mask using an oxidation treatment, a phase shift layer, a light shield layer, and a first antireflection film are formed on a main cell area and a transparent substrate(100) including the frame region. The photoresist layer pattern defining a domain in which the target pattern is formed on the first antireflection film is molded. A first antireflection film pattern and light block film pattern(130) are formed by an etching process using the photoresist layer pattern as a mask. The photoresist layer pattern is removed.