INFRARED SENSOR AND MANUFACTURING METHOD THEREOF

An infrared sensor and a manufacturing method thereof are provided to prevent a problem generated in removing a sacrificial layer from a heat-sensitive device in advance by making reaction of a heat-sensitive resistor rapid according to temperature of a substrate. A first device(1a) is formed on a s...

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Bibliographische Detailangaben
1. Verfasser:	KURASHINA SEIJI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS COLORIMETRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT MEASURING PHYSICS RADIATION PYROMETRY SEMICONDUCTOR DEVICES TESTING
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Beschreibung
Zusammenfassung:	An infrared sensor and a manufacturing method thereof are provided to prevent a problem generated in removing a sacrificial layer from a heat-sensitive device in advance by making reaction of a heat-sensitive resistor rapid according to temperature of a substrate. A first device(1a) is formed on a substrate(2). A temperature detection part(14) outputs a signal corresponding to a rising temperature from an ambient temperature in response to an incident infrared ray. A second device(1b) is formed on the substrate. A signal correction part corrects a signal outputted by the temperature detection part of the first device. A gap(15) is arranged between the temperature detection part of the first device and the substrate. A sacrificial layer(5) made of a diamond like carbon is formed between the substrate and the temperature detection part of the second device.