SEMICONDUCTOR DEVICE HAVING PATTERNS WITH DIFFERENT DISTANCE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE HAVING PATTERNS WITH DIFFERENT DISTANCE AND METHOD OF MANUFACTURING THE SAME

A semiconductor device and a manufacturing method thereof are provided to control a void open in flattening a following interlayer insulation film by forming a void of a uniform shape between metal lines. A semiconductor substrate(100) has a first region and a second region. A plurality of first pat...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: CHO, BYUNG JICK
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device and a manufacturing method thereof are provided to control a void open in flattening a following interlayer insulation film by forming a void of a uniform shape between metal lines. A semiconductor substrate(100) has a first region and a second region. A plurality of first patterns is arranged on the first region with a first gap. A plurality of second patterns is arranged on the second region with a second gap wider than the first gap. A dummy pattern is positioned between the first pattern and the second pattern positioned in a boundary of the first region and the second region. An interlayer insulation film(180) is formed on a top part of the semiconductor substrate in which metal lines(175a,175b,175c) are formed. A void(185) of the same shape is formed between the metal lines.