FOCUS MEASUREMENT METHOD AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

A focus measurement method and a method of manufacturing a semiconductor device are provided to form a resist pattern in which the precision is high by performing the adjustment of focus per every exposure lot. The focus value is set up in an exposure apparatus. The contraction amount of resist pattern is obtained by measuring the dimension of the resist pattern formed by the exposure at the focus value in the top of the substrate multiple times. The dimension of the resist pattern is multiple times measured by the exposure at the establishment focus value of the exposure apparatus. The contraction amount of the resist pattern is measured by the exposure at the establishment focus value. The focus value corresponding to the measured contraction amount is measured. The dimension of the resist pattern is measured by irradiating the electron ray to the same part of the resist pattern.